近红外256×1元InGaAs焦平面探测器无效像元研究  

Inoperable pixels of 256×1 element linear InGaAs near-infrared focal plane arrays

作　　者：李雪[1,2] 邵秀梅[1,2] 唐恒敬[1,2] 汪洋[1,2] 陈郁[1,2] 龚海梅[1,2] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院上海技术物理研究所红外成像材料和器件重点实验室,上海200083

出　　处：《红外与毫米波学报》2011年第5期409-411,438,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金重点项目(50632060)

摘　　要：采用分子束外延方法生长的PIN型InP/InGaAs/InP双异质结材料制备了正照射256×1元近红外探测器,并与128×1奇偶两路读出电路互连,制备了近红外256×1元焦平面探测器.针对近红外InGaAs焦平面探测器中的无效像元问题,通过光学显微镜、扫描电镜和电学测试将无效像元进行分类,并分析了无效像元产生的原因.研究结果表明光敏芯片较低的零偏电阻、键压过程引入的损伤和虚焊以及钝化膜侧面覆盖较薄导致了无效像元的产生,通过光敏芯片设计结构改进和钝化膜工艺优化,消除了近红外256×1元InGaAs焦平面探测器的无效像元.256×1 element front-illuminated InGaAs detector arrays were fabricated by using MBE-grown p-InP/n-InGaAs/n-InP double-heterostructure epitaxial materials and were wire-bonded to 128×1 element odd and even readout integrated circuits（ROICs） in order to form near-infrared 256×1 element InGaAs focal plane arrays（FPAs）.The inoperable pixels exist in the near-infrared InGaAs FPAs.In this paper,the inoperable pixels were classified and analyzed by the optical microscope,SEM and electrical measurements.The results show that the lower resistance of photosensitive detectors at the bias voltage of 0V,the damage and false bonding,and the thinner profile of passivation film cause the inoperable pixels.The near-infrared 256×1 element InGaAs FPAs without inoperable pixels were obtained by improving the structure of photodetectors and the technics of passavition film.

关 键 词：近红外 焦平面 无效像元 

分 类 号：TN21[电子电信—物理电子学]