Preparation of MgO Films as Buffer Layers by Laser-ablation at Various Substrate Temperatures  

作　　者：李凌 王传彬 

机构地区：[1]State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2011年第5期888-890,共3页武汉理工大学学报（材料科学英文版）

基　　金：Funded by the International Science and Technology Cooperation Project (No.2009DFB50470);the National Nature Science Foundation of China (No.50802071);International Science and Technology Cooperation Project of Hubei Province (No.2010BFA017)

摘　　要：MgO thin films were deposited on Si（100） substrates by laser ablation under various substrate temperatures （Tsub）,expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from （200） to （111）.The crystallinity and surface morphology was different too,depending on Tsub.At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.MgO thin films were deposited on Si（100） substrates by laser ablation under various substrate temperatures （Tsub）,expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from （200） to （111）.The crystallinity and surface morphology was different too,depending on Tsub.At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.

关 键 词：MgO films buffer layer laser ablation substrate temperature 

分 类 号：TB383.2[一般工业技术—材料科学与工程]