基于新型非制冷IRFPA读出电路的带隙基准源  

Bandgap Reference Based On Novel Uncooled IRFPA Readout Circuit

作　　者：李凯[1] 周云[1] 张慧敏[1] 蒋亚东[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《红外技术》2011年第10期602-605,共4页Infrared Technology

基　　金：国家自然科学基金资助项目;编号:61021061;电子科技大学富通翱翔计划科研基金;编号:FTAX201013

摘　　要：设计了一种用于新型非制冷IRFPA读出电路的低温漂的低压带隙基准电路。提出了同时产生带隙基准电压源和基准电流源的技术,通过改进带隙基准电路中的带隙负载结构以及基准核心电路,基准电压和基准电流可以分别进行温度补偿。在0.5μm CMOS N阱工艺条件下,采用spectre进行模拟验证。仿真结果表明,在3.3 V条件下,在-20℃～100℃范围内,带隙基准电压源和基准电流源的温度系数分别为35.6×10-6℃-1和37.8×10-6℃-1。当电源电压为3.3 V时,整个电路的功耗仅为0.17 mW。A low voltage bandgap reference for a novel uncooled IRFPA readout circuit is presented. Techniques for designing bandgap references providing both reference voltage and reference current outputs are proposed. By modifying the bandgap load or the bandgap core, the temperature dependences of the voltage output and the current output can be compensated separately. The simulation with spectre was carried out using 0.5 pm N well CMOS technology. Results from simulation showed that the circuit, while operating at 3.3 V, achieved temperature coefficients of 35.6×10^-6℃-1and 37.8×10^-6℃-1 for the voltage output and the current output respectively. When a 3.3 V power supply is used, the circuit just has its power dissipation of 0.17 roW.

关 键 词：基准电压 基准电流 带隙负载结构 温度系数 

分 类 号：TN215[电子电信—物理电子学]