7～11 GHz CMOS环形压控振荡器的设计  

Design of a 7-11 GHz Ring VCO Based on CMOS Process

作　　者：何芝兰[1] 段吉海[1] 

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《微电子学》2011年第5期664-667,共4页Microelectronics

摘　　要：设计了一种全集成差分高速环形压控振荡器(VCO)。采用三级延迟单元环路复用结构,通过正反馈技术以及改变负载电阻值的方法,有效优化延迟单元;采用双控制电压粗/细调谐方式,实现振荡器高频率、低功耗的要求。在SMIC 0.18μm CMOS RF工艺模型下,采用ADS软件对振荡电路进行仿真,在外接电源电压Vdd=1.8V时,输出频率的调谐范围为7.32～11.07GHz,当频率为11GHz时,在偏离中心频率1MHz处相位噪声为-88.32dBc/Hz,在偏离中心频率10MHz处相位噪声为-112.7dBc/Hz,平均功耗为63.5mW。该VCO可应用于锁相环和雷达通信系统。A fully integrated differential high-speed ring voltage-controlled oscillator（VCO） was designed,which was comprised of three-stage delay cell with multi-loop structure.The delay cell was optimized by using positive feedback and modifying load resistance value.In this circuit,high frequency and low power was realized by coarse/fine frequency control.Based on SMIC＇s 0.18 μm 1P6M CMOS process model,the VCO was simulated with ADS.At 1.8 V supply voltage,the VCO had a linear tuning range from 7.32 GHz to 11.07 GHz.Simulation results showed that,for an oscillating frequency of 11 GHz,the circuit had a phase noise of-88.32 dBc/Hz and-112.7 dBc/Hz at 1 MHz and 10 MHz off center frequency,respectively,with an average power of 63.5 mW.

关 键 词：CMOS 压控振荡器 环路复用 相位噪声 

分 类 号：TN402[电子电信—微电子学与固体电子学]