K4体系KTP晶体的制备及其性能研究  

Research on Preparation and Properties of KTP Crystal Grown from K4 Flux System

作　　者：葛世艳[1] 师瑞泽[1] 肖亚波[1] 李祯[1] 张杰[1] 姜秀丽[1] 王立弟[1] 

机构地区：[1]烁光特晶科技有限公司,北京100018

出　　处：《硅酸盐通报》2011年第5期1072-1076,共5页Bulletin of the Chinese Ceramic Society

摘　　要：本文选用K4P2O7助溶剂体系生长KTP晶体,所生长的晶体具有低吸收率和蓝、绿光波段抗灰迹性能,确定其最佳生长配比为KTP/K4=0.8 mol/mol,测定其饱和点为850℃左右,从饱和点缓慢降温到820℃所生长晶体质量最佳,并对其进行了PCI抗灰迹吸收测试、倍频效率测试、电导率测试。结果表明:在同样原料纯度的情况下,吸收系数只有普通K6体系KTP晶体的十几分之一;1064 nm调Q到绿光的转化效率为61.8%(普通KTP转化效率为50%);在1 kV直流长时间加压条件下,Z向电导率达到10-10 S/cm量级,较普通K6体系生长的KTP晶体低2～3个数量级。The KTP crystal was grown from K4P2O7（K4） flux system（It was called GKTP）.The best mixture ratio of KTP to K4 was 0.8 mol/mol and the saturation point was 850 ℃.After a series of testing including anti-gray absorption testing,SHG coefficient testing and conductance testing,it was found that GKTP has well GTR properties and high voltage resistance.Compared with the normal KTP grown in K6 flux system,the conductance of the GKTP was lower 2-3 powers,reach to 10-10 S/cm,and the conversion efficiency was 61.8%.

关 键 词：磷酸氧钛钾 抗灰迹 K4P2O7助溶剂 

分 类 号：O78[理学—晶体学]