涡流二极管三维强旋湍流流动的数值模拟  

Numerical Simulation of Three-Dimensional Strong Rotational Flow in Vortex Diode

作　　者：焦磊[1] 陈枞楠[1] 刘世国[2] 尹俊连[1] 孙青军[1] 王乐勤[1] 

机构地区：[1]浙江大学化工机械研究所,浙江杭州310027 [2]山东高速公路股份有限公司淄博分公司,淄博山东255086

出　　处：《工程热物理学报》2011年第11期1855-1858,共4页Journal of Engineering Thermophysics

基　　金：国家自然科学基金项目资助(No.51006087;No.50979095)

摘　　要：为了揭示涡流二极管内三维强旋流动的特性与其阻抗性能的关系,进一步提高涡流二极管正反向流动阻抗比,本文采用Reynolds应力模型对涡流腔内非对称强旋转湍流流动进行了数值模拟,分析了腔内矢量场与标量场的分布特性,基于涡流腔内的涡量分析,得到了涡流腔内旋流的强制涡与自由涡结构及各自区域范围,并研究了涡流腔径宽比对整体性能的影响,为涡流二极管的结构设计提供参考依据。In order to investigate the relationship between the characteristic of three-dimensional strong rotational flow in vortex diode and its impedance performance, increase the impedance ratio of forward and reverse flow, CFD simulations with Reynolds Stress model were carried out on the unsymmetrical strong rotational turbulent flow in chamber of vortex diode. The structure of forced vortex and free vortex in chamber and their distribution scope were revealed through the analysis of vector field, scalar field and vorticity in the chamber. What ever, the influence on vortex diode comprehensive performance by the ratio of diameter and height of chamber were studied. The results provide some theoretical basis for optimizing the vortex diode.

关 键 词：涡流二极管 强旋湍流 流动阻抗比 数值模拟 

分 类 号：O357.5[理学—流体力学]