温度对PLD法制备CIGS薄膜性能的影响  

Effect of Substrate Temperature on the Properties of CIGS Films Prepared by PLD Method

作　　者：胡居广[1] 林晓东[1] 曹慧群[1] 罗仲宽[1] 李启文[1] 张一倩[1] 刁雄辉[1] 

机构地区：[1]深圳大学,广东深圳518060

出　　处：《稀有金属材料与工程》2011年第10期1848-1851,共4页Rare Metal Materials and Engineering

基　　金：深圳市传感器技术重点实验室开放基金(SST200902);广东省大学生创新实验项目(1059010006)

摘　　要：利用脉冲激光沉积(PLD)法在40～600℃范围内,以石英为基底制备了系列铜铟镓硒(CIGS)薄膜。利用分光光度计,XRD,SEM,EDS等对薄膜进行表征。结果表明,薄膜都以(112)择优取向生长,在40～400℃范围内,温度对薄膜结晶质量、晶粒尺寸等影响不明显;温度达到600℃时,结晶质量、晶粒尺寸及薄膜的红外透光率等显著增加。认为这主要与Ga元素的扩散受温度的影响有关,温度越高,Ga元素有足够的能量进行充分扩散,并完成晶体结构重组,同时分析了Se元素含量随温度变化的原因。Copper indium gallium selenium（CIGS） films were prepared on quartz substrate within 40-600 ℃ by PLD method,and characterized by spectrophotometer,XRD,SEM and EDS.Results show that the films are grown with single chalcopyrite structure preferential（112） orientation,within 40-400 ℃,the grains size,crystallization quality are almost not influenced with temperature,while the temperature reached 600 ℃,grains size and crystal quality,the infrared light transmittance etc.increased significantly.These phenomena are mainly attributed to the effect of substrate temperature on the diffusion of the Ga elements,at high temperature,the diffusion is sufficient and the crystal structure reorganization is finished.The relationship between Se composition and temperature was also analyzed.

关 键 词：CIGS薄膜 脉冲激光沉积 温度 扩散 

分 类 号：TB383.2[一般工业技术—材料科学与工程]