铝掺杂氧化锌陶瓷制备研究  

The Study of ZnO Ceramic Doped with Different Al-contents

作　　者：俞群爱[1] 

机构地区：[1]浙江传媒学院教育技术中心,杭州310018

出　　处：《浙江理工大学学报（自然科学版）》2011年第6期903-905,共3页Journal of Zhejiang Sci-Tech University(Natural Sciences)

基　　金：浙江省科技厅计划项目(2009C31148)

摘　　要：导电氧化锌陶瓷用作靶材通过磁控溅射等薄膜制备技术在玻璃衬底表面沉积透明导电氧化锌薄膜,可用作价格昂贵的氧化铟锡透明导电薄膜的替换材料。氧化锌陶瓷的掺杂将直接影响到氧化锌薄膜的电学性能,因此对氧化锌陶瓷掺杂研究非常必要。氧化锌本身氧空位的存在显示出n型半导体的性质,通过铝离子掺杂能够显著提高载流子浓度。依据此机理,通过液相反应法和陶瓷工艺合成了铝掺杂氧化锌陶瓷,并对其电学性能进行了分析研究。结果显示氧化锌陶瓷电阻率随着铝掺杂量的增加先降低后升高,铝掺杂浓度1%时电阻率最低。ZnO Conductive ceramic target can be used to prepare transparent conductive ZnO film by magnetron sputtering from ZnO conductive ceramic target, which is a promising substitute for the expensive tin-doped indium oxide film. Doping of ZnO ceramic target will have a great influence on the electrical properties of ZnO film. So it is essential to study the effect of doping on the ZnO ceramic. ZnO is a N-type semiconductor material according to intrinsic defects, and its conductivity can be increased by doping with Al. In this paper, Al-doped ZnO ceramic is prepared by a simple liquid reaction and subsequent ceramic technology. And the effect of Al-content on the resistivity of ZnO is analyzed. It is showed that the resistivity decreases firstly with the increase of Al content and then rises. A minimum resistivity of ZnO ceramic is obtained with 1% Al-doped content.

关 键 词：导电陶瓷 氧化锌 电导率 表征 

分 类 号：TB34[一般工业技术—材料科学与工程]