一种评估空间环境下半导体材料损伤的模拟方法  

A Solution of Displacement Damage Evaluation on Silicon Chip Under Space Environment

作　　者：于颢[1,2] 王治强[1] 王文彬[1] 刘薇[1] 

机构地区：[1]中国科学院光电研究院,北京100190 [2]中国科学院研究生院,北京100049

出　　处：《空间科学学报》2011年第6期800-807,共8页Chinese Journal of Space Science

摘　　要：提出了一种模拟空间环境下半导体材料晶格损伤速率的方法,计算了375 km轨道高度不同纬度空间位置的飞行器模型中硅片产生晶格损伤的速率.本方法考虑了宇宙射线的质子、正负电子、中子和γ射线成分,建立了简单的多层飞行器结构模型,并通过模拟给出了芯片上氕、氘、氚、氦、正负电子、正负π介子、γ射线及中子的损伤结果.相比给出材料中的非电离能量损失,更进一步给出了晶格损伤的产生速率,为半导体器件的可靠性评估提供了进一步的参考数据.A method of displacement damage simulation under space environment is presented. This simulation of silicon lattice displacement damage rate is used for low Earth orbit satellite application. In this application, altitude was set for 375 km as a typical variable. Through the simulation, displacement damage rates of different geomagnetic latitude orbital positions were given, which is useful for evaluating reliability of semiconductor devices on spacecraft. And displacement damage rates of different geomagnetic latitude orbital positions were compared, which is useful for orbit design. Diverse particles caused displacement damage are concerned, such as Gamma, electron, positron, pi＋, pi-, proton, deuterium, tritium, helium and aluminum. The main displacement damage source is proton, which is part of cosmic ray or secondary particle from the shell of spacecraft. Compared with None Ionizing Energy Lost （NIEL）, this result is given by ＂density of displacement damage in silicon crystal＂, which is a useful way to evaluate defects of semiconductor device or solar cells, in turn more helpful for engineers.

关 键 词：辐射影响 晶格损伤 蒙特卡洛模拟 空间环境 

分 类 号：TN306[电子电信—物理电子学]