SnO_2:F沉积的La_(0.67)Sr_(0.33)MnO_3薄膜的电阻开关特性研究  

Resistance switching properties of pulsed laser deposited La_(0.67)Sr_(0.33)MnO_3 thin film on F-doped SnO_2 conducting glass

作　　者：孙新格[1] 张婷[1] 刘晓娜[1] 张伟风[1] 

机构地区：[1]河南大学物理与电子学院光伏材料省重点实验室,河南开封475004

出　　处：《功能材料与器件学报》2011年第5期481-485,共5页Journal of Functional Materials and Devices

摘　　要：采用脉冲激光沉积技术在SnO2:F(FTO)衬底上制备了La0.67Sr0.33MnO3(LSMO)薄膜。室温下利用直流电压对Au/LSMO/FTO三明治结构的器件进行了电化学测试。结果显示样品具有明显的双极性电阻开关性能。通过对I-V特性曲线进行分析,认为在高阻态时肖特基势垒和空间电荷限制电流输运机制调控。在高场区,电阻开关的高低阻态现象由电子陷阱中心分布的不对称引起的空间电荷限制电流理论来解释。The La0.67 Sr0.33 MnO3 （LSMO） thin film was grown by pulsed laser deposition on SnO2： F （FTO） substrates. Resistive switching characteristics of Au/LSMO/FTO sandwich structure were tested by direct current voltage at room temperature. The results show the bipolar reversible resistive switching was observed. Analysis of I - V behaviors is carried out, and it is suggested that the resistive switching characteristics are governed by the Schottky conduction mechanism and space -charge -limited -current conduction in high resistive state. The switching process between high resistive state and low resistive state is explained in terms of space - charge - limited - current conduction in higher voltage region caused by asymmetric electron trapping centers.

关 键 词：激光沉积 电阻开关 LA0.67SR0.33MNO3 空间电荷限制电流 

分 类 号：O469[理学—凝聚态物理]