具有双电子束结构的双波段相对论返波振荡器粒子模拟研究  

Investigation of dual-band relativistic backward wave oscillator with dual annular electron beams by particle-in-cell simulation

作　　者：王挺[1] 张建德[1] 钱宝良[1] 

机构地区：[1]国防科学技术大学光电科学与工程学院,长沙410073

出　　处：《强激光与粒子束》2011年第9期2489-2494,共6页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目

摘　　要：研究了一种能够同时产生C波段和X波段微波、具有双电子束结构的相对论返波振荡器,采用嵌套式的高频结构将两个波段的束-波相互作用空间隔离开来,从而使两个波段的束-波相互过程互不影响。当二极管电压为650kV、内外环形电子束流分别为5.4,6.4kA、导引磁场为2.2T时,两个波段微波的频率分别为4.625,8.450GHz,模拟产生的微波功率分别为920,600MW,转换效率约为21.8%,17.1%。并采用粒子模拟法研究了导引磁场、二极管电压及两个束-波相互作用区关键结构参数对器件运行的影响,给出了双波段微波功率、频率随导引磁场、二极管电压等参数的变化曲线。A dual-band relativistic backward-wave oscillator（RBWO） with dual annular electron beams generating C-band and X-band microwaves is investigated by particle-in-cell（PIC） simulation.Two separated beam-wave interaction regions are supplied to obtain independent generation processes of the dual-band microwaves.With the diode voltage of 650 kV,the inner beam current of 5.4 kA and the outer beam current of 6.4 kA guided by a magnetic field of about 2.2 T,the dual-band microwaves are generated with dominant frequencies of 4.625 GHz and 8.450 GHz.The powers of the dual-band microwaves are 920 MW and 600 MW with efficiencies of 21.8% and 17.1%,respectively.The influence of the guiding magnetic field,diode voltage and key structure parameters on the powers and frequencies of the dual-band microwaves is discussed.

关 键 词：相对论返波振荡器 双波段 双电子束 粒子模拟 

分 类 号：TN125.1[电子电信—物理电子学]