基于氮化镓特征的高效功率放大器拓扑设计  

A topology of high-efficiency power amplifier based on GAN HEMT device characteristics

作　　者：雷奇[1] 何松柏[1] 董磊[1] 游飞[1] 

机构地区：[1]电子科技大学集成电路与系统系,四川成都610054

出　　处：《信息与电子工程》2011年第5期569-572,577,共5页information and electronic engineering

基　　金：国家高技术研究发展863计划"宽带高效线性发射技术"资助项目(2007AA01Z283)

摘　　要：基于对功率三极管实际输出端特性的考虑,提出一种易实现的高效率功放拓扑结构,并通过负载控制理论进行更贴合实际的理论分析。基于CREE公司GaN HEMT CGH40010仿真,在输入为25 dBm,偏置为28 V,带宽在2.98 GHz^3.02 GHz时,输出功率高于38.5 dBm,功率附加效率优于70%,并且在3 GHz时功率附加效率达到73.4%。在15 V^30 V的偏置范围内,漏极效率达到70%以上,仿真结果很好地验证了拓扑的可行性。This paper presents one high efficiency mircostrip topology based on the device characteristic of power transistor and analyzes it according to load control theory to make equations more practical.The simulation based on GaN HEMT（Gallium-Nitrogen High Electron Mobility Transistor） CGH40010 of CREE company shows that the output power can reach higher than 38.5 dBm,and Power Adding Efficiency better than 70% under 28 V of bias voltage and 25 dBm of power drive in the bandwidth of 2.98 GHz-3.02 GHz.At 3 GHz,the PAE reaches the maximum of 73.4%.The drain efficiency achieves higher than 70% at bias voltage of 15 V-30 V.The feasibility of the topology is demonstrated.

关 键 词：功率放大器 谐波控制 微带 拓扑 高效率 

分 类 号：TN722.75[电子电信—电路与系统]