A sol-gel method to synthesize indium tin oxide nanoparticles  被引量:6

A sol-gel method to synthesize indium tin oxide nanoparticles

在线阅读下载全文

作  者:Xiuhua Li Xiujuan Xu Xin Yin Chunzhong Li Jianrong Zhang 

机构地区:[1]Department of Chemistry, Key LaboratoryforAdvanced Materials of Ministry of Education, East China University of Science and Technology, Shanghai 200237, China [2]Key Laboratory for Ultrafine Materials of Ministry of Education, East China University of Science and Technology, Shanghai 200237, China

出  处:《Particuology》2011年第5期471-474,共4页颗粒学报(英文版)

基  金:supported by grants from Ph.D. Programs Foundation of Ministry of Education of China (200802511022);National Natural Science Foundation of China (50902049)

摘  要:Transparent conductive indium tin oxide (ITO) nanoparticles were synthesized by a novel sol-gel method. Granulated indium and tin were dissolved in HNO3 and partially complexed with citric acid. A sol-gel process was induced when tertiary butyl alcohol was added dropwise to the above solution. ITO nanopartides with an average crystallite size of 18.5 nm and surface area of 32.6 m^2 ]g were obtained after the gel was heat-treated at 700 ℃, The ITO nanoparticles showed good sinterability, the starting sintering temperature decreased sharply to 900 ℃, and the 1400 ℃ sintered pellet had a density of 98.1% of theoretical density (TD).Transparent conductive indium tin oxide (ITO) nanoparticles were synthesized by a novel sol-gel method. Granulated indium and tin were dissolved in HNO3 and partially complexed with citric acid. A sol-gel process was induced when tertiary butyl alcohol was added dropwise to the above solution. ITO nanopartides with an average crystallite size of 18.5 nm and surface area of 32.6 m^2 ]g were obtained after the gel was heat-treated at 700 ℃, The ITO nanoparticles showed good sinterability, the starting sintering temperature decreased sharply to 900 ℃, and the 1400 ℃ sintered pellet had a density of 98.1% of theoretical density (TD).

关 键 词:Oxide materials Ceramics Sintering Indium tin oxide 

分 类 号:TQ426.81[化学工程] TN304.21[电子电信—物理电子学]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象