AlGaAs/GaAs tunnel junctions in a 4-J tandem solar cell  

AlGaAs/GaAs tunnel junctions in a 4-J tandem solar cell

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作  者:吕思宇 屈晓声 

机构地区:[1]School of Electronic and Information Engineering,Beihang University

出  处:《Journal of Semiconductors》2011年第11期14-17,共4页半导体学报(英文版)

基  金:supported by the National Natural Science Foundation of China(No.10778723)

摘  要:The Ⅲ-Ⅴ compound tandem solar cell is a third-generation new style solar cell with ultra-high efficiency. The energy band gaps of the sub-cells in a GaInP/GaAs/InGaAs/Ge 4-J tandem solar cell are 1.8, 1.4, 1.0 and 0.7 eV, respectively. In order to match the currents between sub-cells, tunnel junctions are used to connect the sub-cells. The characteristics of the tunnel junction, the material used in the tunnel junction, the compensation of the tunnel junction to the overall cell's characteristics, the tunnel junction's influence on the current density of sub-cells and the efficiency increase are discussed in the paper. An A1GaAs/GaAs tunnel junction is selected to simulate the cell's overall characteristics by PC 1 D, current densities of 16.02, 17.12, 17.75 and 17.45 mA/cm^2 are observed, with a Voc of 3.246 V, the energy conversion efficiency under AM0 is 33.9%.The Ⅲ-Ⅴ compound tandem solar cell is a third-generation new style solar cell with ultra-high efficiency. The energy band gaps of the sub-cells in a GaInP/GaAs/InGaAs/Ge 4-J tandem solar cell are 1.8, 1.4, 1.0 and 0.7 eV, respectively. In order to match the currents between sub-cells, tunnel junctions are used to connect the sub-cells. The characteristics of the tunnel junction, the material used in the tunnel junction, the compensation of the tunnel junction to the overall cell's characteristics, the tunnel junction's influence on the current density of sub-cells and the efficiency increase are discussed in the paper. An A1GaAs/GaAs tunnel junction is selected to simulate the cell's overall characteristics by PC 1 D, current densities of 16.02, 17.12, 17.75 and 17.45 mA/cm^2 are observed, with a Voc of 3.246 V, the energy conversion efficiency under AM0 is 33.9%.

关 键 词:Ⅲ-Ⅴ compound tandem solar cell tunnel junction current match energy conversion efficiency 

分 类 号:TN304.23[电子电信—物理电子学] TM914.42[电气工程—电力电子与电力传动]

 

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