As_2S_8 planar waveguide:refractive index changes following an annealing and irradiation and annealing cycle,and light propagation features  

作　　者：邹林儿 王国日 沈云 陈抱雪 矶守 

机构地区：[1]Department of Physics,Nanchang University [2]School of Optical-Electrical and Computer Engineering,University of Shanghai for Science and Technology [3]Department of Chemical Engineering,Tokyo University of Agriculture and Technology

出　　处：《Journal of Semiconductors》2011年第11期18-23,共6页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.60967003,61077042);the Scientific Research Program Foundation of Jiangxi Provincial Education Department,China(No.GJJ11303)

摘　　要：The refractive index ofas-evaporatedamorphous semiconductor As2S8 film upon an annealing and saturation irradiation and annealing cycle is reversible. Upon successive treatment with annealing and non-saturation irradiation and further annealing, the refractive index of the as-evaporated amorphous semiconductor As2S8 film reaches a maximum value and then its reversibility occurs upon annealing. The annealing of the amorphous semiconductor AS2S8 films results in the stabilization of the structure through changes of the S-S bonds in the nearest environment, accompanied by a decrease of film thickness. The As2S8 planar waveguide after annealing （130 ℃） and saturation irradiation and annealing （130 ℃） shows a good propagation characteristic with ca, 0.27 dB/cm low propagation loss of the 632.8 nm guided mode.The refractive index ofas-evaporatedamorphous semiconductor As2S8 film upon an annealing and saturation irradiation and annealing cycle is reversible. Upon successive treatment with annealing and non-saturation irradiation and further annealing, the refractive index of the as-evaporated amorphous semiconductor As2S8 film reaches a maximum value and then its reversibility occurs upon annealing. The annealing of the amorphous semiconductor AS2S8 films results in the stabilization of the structure through changes of the S-S bonds in the nearest environment, accompanied by a decrease of film thickness. The As2S8 planar waveguide after annealing （130 ℃） and saturation irradiation and annealing （130 ℃） shows a good propagation characteristic with ca, 0.27 dB/cm low propagation loss of the 632.8 nm guided mode.

关 键 词：amorphous semiconductor chalcogenide As2S8 waveguide refractive index light propagation 

分 类 号：TN814[电子电信—信息与通信工程]