Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power  

作　　者：Moumita Mukherjee Pravash R.Tripathy S.P.Pati 

机构地区：[1]Centre of Millimeter-Wave Semiconductor Devices and Systems,Institute of Radio Physics and Electronics,University of Calcutta [2]Puroshottam Institute of Engineering & Technology,Rourkela,Odisha,India,Sambalpur University [3]AICTE Emeritus Professor,NIST,Pelur Hills,Berhampur,Odisha,India

出　　处：《Journal of Semiconductors》2011年第11期24-30,共7页半导体学报（英文版）

摘　　要：Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction DoubleDrift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique, devel- oped by the authors, for operation in the Ka-, V- and W-band frequencies. The results are further compared with corresponding Si and Ge homo-junction devices. The study shows high values of device efficiency, such as 23%, 22% and 21.5%, for n-Ge/p-Si IMPATTs at the Ka, V and W bands, respectively. The peak device negative con- ductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7× 10^6 S/m^2 and 71.3× 106 S/m^2, which are -3-4 times better than their Si and Ge counterparts at the V-band. The computed values of RF powerdensity for n-Ge/p-Si hetero-junction IMPATTs are 1.0 ×10^9, 1.1 × 10^9 and 1.4× 10^9 W/m^2, respectively, for Ka-, V- and W-band operation, which can be observed to be the highest when compared with Si, Ge and n-Si/p-Ge devices. Both of the hetero-junctions, especially the n-Ge/p-Si hetero-junction diode, can thus become a superior RF-power generator over a wide range of frequencies. The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave IMPATT for applications in the civil and defense-related arena.Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction DoubleDrift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique, devel- oped by the authors, for operation in the Ka-, V- and W-band frequencies. The results are further compared with corresponding Si and Ge homo-junction devices. The study shows high values of device efficiency, such as 23%, 22% and 21.5%, for n-Ge/p-Si IMPATTs at the Ka, V and W bands, respectively. The peak device negative con- ductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7× 10^6 S/m^2 and 71.3× 106 S/m^2, which are -3-4 times better than their Si and Ge counterparts at the V-band. The computed values of RF powerdensity for n-Ge/p-Si hetero-junction IMPATTs are 1.0 ×10^9, 1.1 × 10^9 and 1.4× 10^9 W/m^2, respectively, for Ka-, V- and W-band operation, which can be observed to be the highest when compared with Si, Ge and n-Si/p-Ge devices. Both of the hetero-junctions, especially the n-Ge/p-Si hetero-junction diode, can thus become a superior RF-power generator over a wide range of frequencies. The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave IMPATT for applications in the civil and defense-related arena.

关 键 词：admittance characteristics double drift diode high-power IMPATT high-efficiency MM-wave de- vice Si/Ge and Ge/Si material systems 

分 类 号：TN312.7[电子电信—物理电子学]