Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure  

作　　者：王永顺 冯晶晶 刘春娟 汪再兴 张彩珍 常鹏 

机构地区：[1]School of Electronic and Information Engineering,Lanzhou Jiaotong University [2]School of Physical Science and Technology,Lanzhou University

出　　处：《Journal of Semiconductors》2011年第11期60-64,共5页半导体学报（英文版）

基　　金：supported by the Scientific and Technological Supporting Program of Gansu Province,China(No.097GKCA052);the Foundamental Research Funds for the Central Universities(No.lzujbky-2009-14)

摘　　要：The failure of a bipolar static induction transistor （BSIT） often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper. The influences of material, structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth. The technological approaches are developed to improve the dynamical characteristics of BSITs.The failure of a bipolar static induction transistor （BSIT） often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper. The influences of material, structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth. The technological approaches are developed to improve the dynamical characteristics of BSITs.

关 键 词：bipolar static induction transistor dynamical parameters transient processes potential barrier power consumption 

分 类 号：TN32[电子电信—物理电子学]