Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer  

作　　者：李志聪 李盼盼 王兵 李鸿渐 梁萌 姚然 李璟 邓元明 伊晓燕 王国宏 李晋闽 

机构地区：[1]Semiconductor Lighting R & D Center,Institute of Semiconductors,Chinese Academy of Sciences [2]Yangzhou Zhongke Semiconductor Lighting Company

出　　处：《Journal of Semiconductors》2011年第11期69-71,共3页半导体学报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(No.2008AA03A197)

摘　　要：Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes （LEDs）, the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared. 6.8% Al composition in the stacks showed the highest electrostatic discharge （ESD） endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%.Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes （LEDs）, the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared. 6.8% Al composition in the stacks showed the highest electrostatic discharge （ESD） endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%.

关 键 词：AlGaN/GaN stacks light-emitting diodes dislocation density ESD 

分 类 号：TN312.8[电子电信—物理电子学]