Effect of copper slurry on polishing characteristics  

作　　者：胡轶 刘玉岭 刘效岩 王立冉 何彦刚 

机构地区：[1]Institute of Microelectronics,Hebei University of Technology

出　　处：《Journal of Semiconductors》2011年第11期172-176,共5页半导体学报（英文版）

基　　金：supported by the Special Project Items No.2 in the National Long-Term Technology Development Plan,China(No.2009ZX02308)

摘　　要：The composition of the polishing solution is optimized by investigating the impact of the WIWNU （the so-called within-wafer-non-uniformity WIWNU） and the removal rate （RR） on the polishing characteristics of copper, The oxidizer concentration is 1 Vol%; the abrasive concentration is 0.8 Vol%; the chelating agent of the solution is 2 Vol%. The working pressure is 1 kPa. The defect on the surface is degraded and the surface is clean after polishing. The removal rate is 289 nm/min and the WIWNU is 0,065. The surface roughness measured by AFM after CMP （chemical mechanical planarization） is 0.22 nm.The composition of the polishing solution is optimized by investigating the impact of the WIWNU （the so-called within-wafer-non-uniformity WIWNU） and the removal rate （RR） on the polishing characteristics of copper, The oxidizer concentration is 1 Vol%; the abrasive concentration is 0.8 Vol%; the chelating agent of the solution is 2 Vol%. The working pressure is 1 kPa. The defect on the surface is degraded and the surface is clean after polishing. The removal rate is 289 nm/min and the WIWNU is 0,065. The surface roughness measured by AFM after CMP （chemical mechanical planarization） is 0.22 nm.

关 键 词：copper slurry chemical mechanical planarization WIWNU 

分 类 号：TN405[电子电信—微电子学与固体电子学]