碲溶剂法生长的Zn_(1-x)Cr_xTe稀磁半导体晶锭中富碲相的研究  

Study on Te-rich Phase in Zn_(1-x)Cr_xTe Diluted Magnetic Semiconductor Ingot Grown by Te-solvent Method

作　　者：杨睿[1] 孙晓燕[1] 刘长友[1] 徐亚东[1] 查钢强[1] 王涛[1] 介万奇[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,西安710072

出　　处：《人工晶体学报》2011年第5期1102-1106,共5页Journal of Synthetic Crystals

基　　金：国家重点基础研究发展计划(973)项目(2011CB610406);国家自然科学基金资助项目

摘　　要：利用碲溶剂法生长Zn1-xCrxTe晶体晶锭,用红外透过显微镜及扫描电子显微镜观察了晶锭不同位置富碲相的分布与形态。结果表明:晶锭的外围存在一层富碲相,Zn1-xCrxTe晶体的中部碲夹杂相较少,碲在晶界处易富集;红外透过显微成像所显示的晶粒内部的较大碲夹杂相呈六边形,而晶界处的碲夹杂相形状不规则。Zn1-xCrxTe crystal was grown by tellurium solvent method.The distribution and the shape of the Te-rich phase on different position of the ingot was studied by the infrared transmission microscopy and the scanning electron microscopy.It was found that the ingot is covered by Te-rich layers.Tellurium inclusions are less in the middle part of Zn1-xCrxTe crystal,but tellurium is more likely to concentrate on the grain boundaries.Hexagonal tellurium inclusions were observed inside the grains.The shape of the tellurium inclusions in the grain boundaries are irregular.

关 键 词：Zn1-xCrxTe 碲溶剂法 富碲相 

分 类 号：TN304[电子电信—物理电子学]