射频磁控溅射法制备Zn_(1-x)Mg_xO薄膜及其性能的研究  

Preparation and Properties of Zn_(1-x)Mg_xO Thin Films by Radio Frequency Magnetron Sputtering Method

作　　者：王彦利[1] 杨元政[1] 高振杰[1] 谢致薇[1] 陈先朝[1] 何玉定[1] 

机构地区：[1]广东工业大学材料与能源学院,广州510006

出　　处：《人工晶体学报》2011年第5期1261-1265,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(50771037);高等学校博士学科点专项研究基金(200805620004)资助项目

摘　　要：本文通过在ZnO靶材上放置高纯Mg片,运用射频磁控溅射法在普通玻璃衬底上制备了Zn1-xMgxO(x=0.1,0.16,0.18,0.24)薄膜。用X射线衍射仪、扫描电镜、紫外-可见-分光光度计等研究了Zn1-x MgxO薄膜的组织结构和性能。结果表明:Zn1-xMgxO薄膜呈ZnO的纤锌矿结构,在ZnO晶格中Mg2+有效地替代了Zn2+。样品表面比较平整,颗粒均匀致密,薄膜质量较高,且在可见光范围内光透过率均为90%左右,具有极好的透光性;此外,随着Mg掺入量的增多,Zn1-xMgxO薄膜的吸收边出现蓝移现象,实现了对禁带宽度的调节。Zn1-xMgxO（x=0.1,0.16,0.18,0.24） thin films were deposited on common glass substrates by RF magnetron sputtering technology with ZnO target which was placed on high-purity Mg thin pieces.The structure,surface morphology and optical properties of the films were characterized by XRD,SEM and transmittance measurements.It was found that all the Zn1-xMgxO films showed ZnO wurtzite structure,which indicated that the Zn2＋ were successfully substituted by Mg2＋ in the ZnO lattice.The surface of samples was smooth,and the grains were homogeneous and compact.The average transmittance of all the films for the visible wavelength region was about 90%.As Mg content increasing,the blue shift of absorption edge of Zn1-xMgxO thin films was observed,which meant that Zn1-xMgxO thin film could adjust the band gaps.

关 键 词：射频磁控溅射 Zn1-xMgxO薄膜 禁带宽度 

分 类 号：O484.1[理学—固体物理]