氮化铝基片的集群磁流变抛光加工  

Polishing AlN substrate by cluster magnetorheological effect

作　　者：白振伟[1] 阎秋生[1] 路家斌[1] 潘继生[1] 祝江停[1] 

机构地区：[1]广东工业大学机电工程学院,广州510006

出　　处：《金刚石与磨料磨具工程》2011年第5期35-38,共4页Diamond & Abrasives Engineering

基　　金：国家自然科学基金(No.50875050);NSFC-广东联合基金(U1034006);广东省自然科学基金(No.9251009001000009)资助

摘　　要：本文进行了氮化铝基片的集群磁流变抛光加工研究,分析了主要工艺参数的影响和加工表面形貌特征。实验结果表明:集群磁流变抛光加工氮化铝基片可以实现高效率超光滑抛光,原始表面Ra1.730 2μm抛光60 min后可以达到Ra0.037 8μm。选用碳化硅磨料,磨料质量浓度为0.05 g/mL,工件与抛光盘转速比为5.8左右,加工初期采用较小加工间隙最后抛光采用较大加工间隙,可以获得较高的材料去除率和较光滑的加工表面。The polishing of AlN substrate by cluster magnetorheological（MR） effect technology is researched,and the influence of the preliminary experimental parameters and the feature of machined surface morphology are studied.Experimental result demonstrates that cluster MR-effect plane polishing AlN substrate is feasible and it can achieve ultra smooth polishing with high efficiency,after 60 minutes polishing the original surface roughness was decreased from Ra1.730 2 μm to Ra 0.037 8 μm.Smoother machined surface and higher material removal were obtained when we selected appropriate machining parameters including SiC abrasive（mass concentration0.05 g/mL）,the speed ratio between workpiece and polishing disc about 5.8,smaller machining gap during the initial polishing and larger machining gap during the final polishing.

关 键 词：氮化铝基片 集群磁流变效应 抛光 表面粗糙度 

分 类 号：TG58[金属学及工艺—金属切削加工及机床]