Ca-B-Si掺杂对Ba(Zn1／3Ta2／3)O3陶瓷介电性能的影响  

Effect of Ca–B–Si Additive on the Microwave Dielectric Properties of Ba(Zn_(1/3)Ta_(2/3))O_3 Ceramics

作　　者：陈黎[1] 吴孟强[1] 肖勇[1] 姜锐[1] 黄明冀[1] 刘轶[1] 张树人[1] 

机构地区：[1]电子科技大学,电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《硅酸盐学报》2011年第11期1787-1791,共5页Journal of The Chinese Ceramic Society

基　　金：四川省青年基金(JS0303001)资助项目

摘　　要：采用固相烧结法制备了添加烧结助剂Ca–B–Si(CBS)微晶玻璃的Ba(Zn1/3Ta2/3)O3(BZT)陶瓷。研究了CBS添加量对BZT陶瓷烧结温度和微波介电性能的影响。结果表明,CBS起到助溶剂的作用,添加CBS降低了BZT陶瓷的烧结温度,并改善了微波介电性能。添加2%(质量分数)的CBS时,BZT的烧结温度从纯相烧结时的1 600℃降低到1 150℃,并具有良好的微波介电特性:相对介电常数εr=32.06,品质因数与频率之积Q×f=149×103 GHz,谐振频率温度系数τf=–0.14×10–6/℃。Ba（Zn1/3Ta2/3）O3（BZT） microwave dielectric ceramics with Ca–B–Si（CBS） microcrystal glass were prepared by a solid state reaction method.The effect of doping amounts of CBS on the sintering temperature and the dielectric properties of the BZT ceramics were investigated.The results indicate that the addition of CBS as a solvent can reduce the sintering temperature of the BZT ceramics and improve the microwave dielectric properties.The sintering temperature of the BZT ceramics doped with the CBS of 2% in mass could be decreased from 1 600 ℃ to 1 150 ℃.The superior dielectric properties at 1 150 ℃ were the relative dielectric constant εr of 32.06,the product of quality factor and frequency（Q × ？） of 149 × 103 GHz and the resonance frequency temperature coefficient τf of –0.14 × 10–6/℃

关 键 词：钙硼硅掺杂 微波介质陶瓷 微晶玻璃 钽锌酸钡陶瓷 介电特性 

分 类 号：TM277[一般工业技术—材料科学与工程]