ZnCoO薄膜的生长取向及其性能  

Growth Orientation and Properties of ZnCoO Thin Films

作　　者：张维广[1] 吕斌[1] 张利强[1] 叶颖惠[1] 叶志镇[1] 

机构地区：[1]浙江大学材料科学与工程学系,浙江杭州310027

出　　处：《材料科学与工程学报》2011年第5期679-683,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(51002134);中央高校基本科研费专项资金资助项目(2010QNA4002)

摘　　要：利用脉冲激光沉积法在石英和玻璃衬底上制备了ZnCoO以及Zn(Co,Ga)O薄膜,分别研究了其结构形貌和电学、光学及磁学等性能。研究发现,Ga掺杂后ZnCoO薄膜的择优取向由(002)向(101)转变,并且在玻璃衬底的Zn(Co,Ga)O薄膜具有更为单一的(101)取向,我们分析认为,Ga的掺入是引起生长取向转变的重要因素。此外,相比于ZnCoO,Zn(Co,Ga)O薄膜的电学性能明显提高,光学带隙蓝移,同时具有较好的室温铁磁性。ZnCoO and Zn（Co,Ga）O thin films have been grown on quartz or glass substrates by pulsed laser deposition（PLD）.The structural,electrical,optical,and magnetic properties of the as-prepared films were investigated.It is found that the preferential orientation of ZnCoO thin films gradually transits from（002） plane to（101） plane by doping Ga.Moreover,the Zn（Co,Ga）O thin film deposited on glass substrate has nearly a single（101） peak,which is proposed that it is associated with the surface energy difference between ZnCoO（002） and ZnCoO（101） when Ga was doped.The results offer an opportunity for preparating non-polar ZnO thin films.Additionally,compared with ZnCoO,it is found that the Zn（Co,Ga）O thin film has better electrical and magnetic properties,and with a larger optical band gap.

关 键 词：Co-Ga共掺 生长取向 光学性能 磁学性能 

分 类 号：TN304[电子电信—物理电子学]