含有一个方势垒单层石墨烯的隧穿特性  

Transport Properties in a Graphene-based Single Square-barrier Structure

作　　者：王素新[1,2] 韩静媛[2] 袁爱国[2] 

机构地区：[1]河北师范大学物理科学与信息工程学院,石家庄050024 [2]河北民族师范学院物理系,河北承德067000

出　　处：《固体电子学研究与进展》2011年第5期445-448,共4页Research & Progress of SSE

基　　金：河北省自然科学基金资助项目(A2011205092);河北省新型薄膜材料重点实验室开放课题

摘　　要：利用传递矩阵的方法研究了含有一个方势垒的单层石墨烯的隧穿特性,得到了透射概率与入射粒子费米能以及势垒宽度、势垒高度的变化关系,并且计算了势垒的结构参数及入射粒子费米能对低温电导的影响。这些结果可以为设计基于石墨烯材料的纳米器件提供理论参考。Transport properties in a graphene-based single square-barrier structure are investigated by using the transfer-matrix technique.The transmission probability and the angularly averaged conductance through the structure have been calculated and analyzed.The relations between transmission probability and the Fermi energies,the barrier width as well as the barrier height are revealed.By making a comparison of angularly averaged conductance in different Fermi energies and structural parameters,the conductance properties are revealed.These results are helpful in designing Nano devices based on graphene.

关 键 词：石墨烯 方势垒 隧穿特性 电导 

分 类 号：O469[理学—凝聚态物理]