十字型CMOS集成霍尔传感器的简化仿真模型  

Simplified Simulation Model for Cross-shaped CMOS Integrated Hall Sensor

作　　者：何秋阳[1] 徐跃[2] 赵菲菲[2] 

机构地区：[1]南京邮电大学通达学院,江苏南京210003 [2]南京邮电大学电子科学与工程学院,江苏南京210003

出　　处：《仪表技术与传感器》2011年第10期13-15,共3页Instrument Technique and Sensor

摘　　要：文中提出了一种工作在低磁场条件下的十字型CMOS集成霍尔传感器的简化仿真模型。该模型结构简单,由1个包含电阻、电流控制电压源和电容的无源网络构成。该模型全面考虑了几何、温度和封装应力等因素带来的影响,由模拟硬件描述语言Verilog_A来实现,已成功在Cadence的Spectre仿真器上完成了电路仿真。为了验证模型的准确性,在相同工艺参数下使用Silvaco TCAD对该十字型霍尔传感器进行了三维器件仿真,器件仿真和电路仿真结果达到了很好的一致性,表明该模型在低磁场条件下具有较高的仿真精度。A simplified circuit simulation model for CMOS integrated cross-shaped Hall sensor working at low magnetic field circumstance was presented. The structure of the model is very simple. It only consisted of a network of passive components inclu- ding resistors, current-controlled voltage sources and capacitances. The effects of geometry, temperature and packaging stress are completely taken into account in this model. The model was implemented in VerilogVol. 47 （ 1998 ）, p. A analog hardware-descrip- tion language and successfully tested in Cadence Spectre simulator. In order to prove the accuracy of the model, the electrical char- acteristics of cross-shaped Hall sensor were simulated in 3D using Silvaco TCAD under the same technology parameters used in the circuit simulation model. A good agreement was achieved between the behavioral Verilog_A simulation and 3D device simulation, which shows a relatively high simulation accuracy of the model under low magnetic field circumstance.

关 键 词：十字型霍尔器件 电路仿真模型 模拟硬件描述语言 

分 类 号：TP212.3[自动化与计算机技术—检测技术与自动化装置]