应用于半导体器件的掺杂纳米金刚石膜  

Semiconductor application of doped nano-crystalline diamond film

作　　者：苏含[1] 汪建华[1,2] 熊礼威[1] 刘鹏飞[1] 江川[1] 

机构地区：[1]武汉工程大学湖北省等离子体化学与新材料重点实验室,武汉430074 [2]中国科学院等离子体物理研究所,合肥230031

出　　处：《武汉工程大学学报》2011年第10期68-72,共5页Journal of Wuhan Institute of Technology

基　　金：国家自然科学基金资助项目(11175137)

摘　　要：金刚石膜有着高的热导率、宽禁带、高的介质击穿场强、高的载流子迁移率等优点,是非常理想的半导体材料.本文介绍了掺杂纳米金刚石薄膜作为半导体器件工作层的优点,综述了金刚石p型掺杂和n型掺杂的研究现状,并对影响纳米金刚石薄膜生长的因素进行了探讨.指出了金刚石膜在半导体器件的应用趋势,并对其应用前景进行展望.Diamond film is an ideal semiconductor material due to its excellent properties,such as high thermal conductivity,wide band gap,high dielectric breakdown field and good carrier mobility.This paper describes the advantages of the doped diamond films as the working layer in semiconductor devices,and presents a comprehensive review of research status in diamond about p and n doping.The factors that influence the growth of Nano-crystalline diamond films are also discussed.The trends of the diamond film applications in semiconductor devices are investigated and the application potential is prospected.

关 键 词：纳米金刚石膜 半导体器件 掺杂 

分 类 号：TQ177.5[化学工程—硅酸盐工业]