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作 者:徐静[1]
出 处:《河北工程大学学报(自然科学版)》2011年第3期108-110,共3页Journal of Hebei University of Engineering:Natural Science Edition
基 金:邯郸市科学技术研究与发展计划项目(0821120081-3)
摘 要:在800℃基底温度下,以单晶硅为基底,采用磁控溅射法制备了FeTaPt多层膜。通过XRD检测样品为单相,利用VSM测量了样品在双磁场下的磁化强度与时间的关系,并且利用磁滞Preisach模型得到材料的拟和参数。结果表明:在样品矫顽力附近出现了磁化强度随时间对数的线性变化,当磁场偏离矫顽力时,磁粘滞行为将偏离线性变化,这不仅与H1和H2有关,而且与H1、H2的差值有关,H1、H2差值越小,非线性衰减越明显。FeTaPt films were prepared by reactive magnetron co-sputtering on Si substrate at 800℃.X-ray difffraction(XRD) measurement revealed that the multilayer films were single phase.The time dependence of magnetization under double-field were measured and studied by Preisach hysteresis model,and we get the parameters through the simulation.The results show that the magnetic intensity linearly changes with the logarithm of time near coercive force.When the external magnetic field deviate away from coercive force,the magnetic viscosity will change its linear variation,which not only related to H1 and H2,but also to the difference value of H1 and H2.The smaller the difference between the H1 and H2,is,the more obvious the nonlinear attenuation is.
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