多孔低介电氧化硅陶瓷材料的制备  

Preparation of Porous Silicon Ceramics with Low Dielectric Constant

作　　者：付振生[1] 金江[1] 

机构地区：[1]南京工业大学材料科学与工程学院,江苏南京210009

出　　处：《陶瓷学报》2011年第3期385-389,共5页Journal of Ceramics

摘　　要：采用氧化硅为原料,木屑作为造孔剂制备了多孔的氧化硅陶瓷材料。借助于气孔率测试、抗弯强度测试、介电性能测试和SEM测试手段分析了造孔剂和烧结助剂的添加量对材料性能的影响。结果表明:加入BN作为添加剂烧成的氧化硅抗弯强度最大可达到14.80MPa。加入木屑作为造孔剂制备的陶瓷可以形成明显的气孔,气孔率最高可达到48.40%,介电常数最低可以达到3.0。The porous silicon ceramic materials were prepared from SiO2 and sawdust.The tests of porosity,flexural strength and dielectric properties and SEM are used to examine the effects of the pore-forming agent and the sintering additives on the properties of the materials.The results show： the highest value of the flexural strength of the sample made with sintering additives can reach 14.80MPa;sawdust is a useful pore-forming agent;the porosity of the sample can reach 48.40%,and the dielectric constant can reach as low as 3.0.

关 键 词：多孔材料 低介电常数 氧化硅陶瓷 木屑 

分 类 号：TQ174.75[化学工程—陶瓷工业]