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作 者:白安琪 郑军 陶冶了 左玉华 薛春来 成步文 王启明
出 处:《Chinese Physics B》2011年第11期391-396,共6页中国物理B(英文版)
基 金:supported by the Major State Basic Research Programme of China(Grant No.2007CB613404);the National Natural Science Foundation of China(Grant Nos.60906035,61036001,61036003,and 51072194);the Knowledge Innovation Program of the Chinese Academy of Sciences(Grant No.ISCAS2009T01)
摘 要:Well-aligned and closely-packed silicon nanopillar (SNP) arrays are fabricated by using a simple method with magnetron sputtering of Si on a porous anodic alumina (PAA) template at room temperature. The SNPs are formed by selective growth on the top of the PAA pore walls. The growth mechanism analysis indicates that the structure of the SNPs can be modulated by the pore spacing of the PAA and the sputtering process and is independent of the wall width of the PAA. Moreover, nanocrystals are identified by using transmission electron microscopy in the as-deposited SNP samples, which are related to the heat isolation structure of the SNPs. The Raman focus depth profile reveals a high crystallization ratio on the surface.Well-aligned and closely-packed silicon nanopillar (SNP) arrays are fabricated by using a simple method with magnetron sputtering of Si on a porous anodic alumina (PAA) template at room temperature. The SNPs are formed by selective growth on the top of the PAA pore walls. The growth mechanism analysis indicates that the structure of the SNPs can be modulated by the pore spacing of the PAA and the sputtering process and is independent of the wall width of the PAA. Moreover, nanocrystals are identified by using transmission electron microscopy in the as-deposited SNP samples, which are related to the heat isolation structure of the SNPs. The Raman focus depth profile reveals a high crystallization ratio on the surface.
关 键 词:silicon nanopillar arrays porous anodic alumina nanocrystal room temperature
分 类 号:TB383.1[一般工业技术—材料科学与工程]
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