Growth and properties of wide spectral white light emitting diodes  

作　　者：谢自力 张荣 傅德颐 刘斌 修向前 华雪梅 赵红 陈鹏 韩平 施毅 郑有炓 

机构地区：[1]School of Electronics and Engineering,Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Nanjing University

出　　处：《Chinese Physics B》2011年第11期414-416,共3页中国物理B（英文版）

基　　金：supported by the Special Funds for Major State Basic Research Project,China(Grant No.2011CB301900);the Hi-tech Research Project,China(Grant No.2009AA03A198);the National Natural Science Foundation of China(Grant Nos.60990311, 60721063,60906025,60936004,60731160628,and 60820106003);the Nature Science Foundation of Jiangsu Province,China (Grant Nos.BK2008019,BK2010385,BK2009255,and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics,China

摘　　要：Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction t9/2/9 scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400 700 nm, which is almost the whole visible light spectrum.Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction t9/2/9 scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400 700 nm, which is almost the whole visible light spectrum.

关 键 词：metal-organic chemical vapor deposition GaN/InGaN multi-quantum wells group Ⅲ-Ⅴsemiconductor  wide spectral white light 

分 类 号：TN312.8[电子电信—物理电子学]