A novel thin drift region device with field limiting rings in substrate  

作　　者：李琦 朱金鸾 王卫东 韦雪明 

机构地区：[1]Guangxi Key Laboratory of Information and Communication,Guilin University of Electronic Technology [2]Guilin Strong Micro Electronics Co.,Ltd

出　　处：《Chinese Physics B》2011年第11期433-437,共5页中国物理B（英文版）

基　　金：supported by the Guangxi Provincial Natural Science Foundation,China(Grant No.2010GXNSFB013054);the Guangxi Provincial Key Science and Technology Program,China(Grant No.11107001-20)

摘　　要：A novel thin drift region device with heavily doped N＋ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor （SFLR LDMOS）. In the SFLR LDMOS, the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions, so the vertical electric field is improved significantly. A model of the breakdown voltage is developed, from which optimal spacing is obtained. The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.A novel thin drift region device with heavily doped N＋ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor （SFLR LDMOS）. In the SFLR LDMOS, the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions, so the vertical electric field is improved significantly. A model of the breakdown voltage is developed, from which optimal spacing is obtained. The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.

关 键 词：field limiting ring reduced surface field reduced bulk field breakdown voltage 

分 类 号：TN386.1[电子电信—物理电子学]