利用电化学方法制备有序多孔硅阵列  

On formation of ordered porous silicon array utilizing electrochemical etching technology

作　　者：徐前刚[1] 刘珂[1] 

机构地区：[1]沈阳航空航天大学材料科学与工程学院,辽宁沈阳110136

出　　处：《沈阳航空航天大学学报》2011年第5期43-47,共5页Journal of Shenyang Aerospace University

基　　金：国家自然科学基金(项目编号:50704001)

摘　　要：采用电化学刻蚀的方法,在自制的电解槽中制备n型<100>晶向多孔硅条状阵列。通过扫描电子显微镜对生成的多孔硅进行形貌观察,并对多孔硅条状阵列的生长速率与形貌进行了初步的理论分析和实验研究。实验结果表明,多孔硅的生长速率主要由临界电流密度决定,多孔硅生成初始阶段产生锥形刻痕的原因是初始电流密度比较小,加大电流密度可以消除刻痕。多孔硅分叉是由孔间距远远大于自由电荷区而产生的,而深槽中出现分立小孔的原因是反应产生的氢气阻碍了阳极氧化的进行。本实验结果对开展多孔硅进一步的研究工作具有指导意义。This paper investigates the formation of n-type ordered porous silicon array in the homemade etching cell with electrochemical etching technology. The growth rate and morphology of the formed porous silicon is observed with the scanning electron microscope. And a series of experiments and tests are carded out. The results reveal that the growth rate of the porous silicon is mainly decided by the critical current den- sity. The pyramidal notches at the initial stage caused by the small initial current density can be eliminated by higher current density. The branching in the bulk is caused by the pore spacing much larger than free charge area. The discrete holes in the pores are produced by the chemical reaction that the hydrogen hinders the anodic oxidation. These results can provide guidance for further research of porous silicon.

关 键 词：材料学 多孔硅 电化学刻蚀 阳极氧化 

分 类 号：TN205[电子电信—物理电子学] TN305.7