氧化石墨烯薄膜的光电化学性质  

Photoelectrochemical Properties of Graphene Oxide Film

作　　者：王纪学[1] 王科志[1] 杨洪强[1] 黄喆[1] 

机构地区：[1]北京师范大学化学学院,北京100875

出　　处：《化学学报》2011年第21期2539-2542,共4页Acta Chimica Sinica

基　　金：国家自然科学基金(Nos.90922004;20971016);中央高校基本科研业务费专项资金;北京市大学生科学研究与创业行动计划;北京师范大学分析测试基金资助项目

摘　　要：用改进的Hummers法制备了氧化石墨烯(GO),在质子化的氧化铟-氧化硒导电玻璃基片上制备了静电自组装薄膜,通过紫外-可见光谱和扫描电镜对薄膜进行了表征并研究了薄膜的光电化学性质.结果表明,GO薄膜是一种稳定的光电阴极材料,在光强为100 mW/cm2的白光照射下,偏压为-0.4 V时,0.1 mol?L-1的Na2SO4溶液中薄膜电极的光电流密度达3.72μA/cm2.Graphene oxide（GO） was prepared using a modified Hummers approach,and deposited by elec-trostatically assembly technique onto protonated indium-tin oxide（ITO） coated glass substrate.The thus-formed GO thin film was characterized by using UV-visible absorption spectroscopy and scanning electron microscopy.The GO coated ITO electrode in 0.1 moloL^-1 Na2SO4 was also subjected to photoelec-trochemical studies,and was found to exhibit stable cathodic photocurrent density of 3.72 μA/cm^2 under white light irradiance of 100 mW/cm^2 and-0.4 V bias voltage.

关 键 词：氧化石墨烯 自组装膜 光电性质 

分 类 号：O484.4[理学—固体物理]