Ferroelectric properties of Bi_(3.4)Ho_(0.6)Ti_3O_(12) thin films prepared by sol-gel method  

作　　者：FU ChengJu1, HUANG ZhiXiong1, LI Jie2 & GUO DongYun3 1 School of Materials Science and Technology, Wuhan University of Technology, Wuhan 430070, China 2 School of Mechanical Engineering, Chongqing University of Science and Technology, Chongqing 400050, China 3 Department of Physics, Wuhan University, Wuhan 430072, China 

出　　处：《Science China(Technological Sciences)》2008年第9期1439-1444,共6页中国科学（技术科学英文版）

基　　金：the Hubei Province Natural Science Foundation (Grant No. 2007ABA309)

摘　　要：We have prepared the Ho-substituted bismuth titanate (Bi3.4Ho0.6Ti3O12, BHT) thin films on Pt/Ti/SiO2/Si substrates using sol-gel method. The crystal structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The BHT film shows a single phase of Bi-layered Aurivillius structure and dense microstructure. The 2Pr and 2Ec of the 600-nm-thick BHT film were 38.4 μC/cm2 and 376.1 kV/cm, respectively at applied electric field 500 kV/cm. The dielectric constant and dielectric loss are about 310 and 0.015 at a frequency of 1 MHz, respectively. The Pr value decreased to 93% of its pre-fatigue values after 4.46×109 switching cycles at 1 MHz frenquency, and the BHT film shows good in-sulating behavior according to the test of leakage current.We have prepared the Ho-substituted bismuth titanate (Bi3.4Ho0.6Ti3O12, BHT) thin films on Pt/Ti/SiO2/Si substrates using sol-gel method. The crystal structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The BHT film shows a single phase of Bi-layered Aurivillius structure and dense microstructure. The 2Pr and 2Ec of the 600-nm-thick BHT film were 38.4 μC/cm2 and 376.1 kV/cm, respectively at applied electric field 500 kV/cm. The dielectric constant and dielectric loss are about 310 and 0.015 at a frequency of 1 MHz, respectively. The Pr value decreased to 93% of its pre-fatigue values after 4.46×109 switching cycles at 1 MHz frenquency, and the BHT film shows good in-sulating behavior according to the test of leakage current.

关 键 词：Bi3.4Ho0.6Ti3O12 THIN film SOL-GEL method FERROELECTRIC property fatigue dielectric CONSTANT 

分 类 号：TB383.2[一般工业技术—材料科学与工程]