Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor  

作　　者：AN YiRan LU YiJia LI DongSan CHEN YaoSong 

机构地区：[1]Department of Mechanics,Peking University,Beijing 100871,China [2]North Microelectronic Co.Ltd,Beijing 100016,China

出　　处：《Science China(Technological Sciences)》2008年第6期674-682,共9页中国科学（技术科学英文版）

摘　　要：More and more importance has been attached to inductively coupled plasma (ICP) in semiconductor manufacture. For a deep understanding of the plasma discharge process in the etching reactor, this study made a three-dimensional simulation on the Ar plasma discharge process with the commercial software CFD-ACE, which is according to the real experiment conditions and data supplied by North Microelec-tronic Corporation. The error of the simulation results is in the range of ±20% with credibility. The numerical results show that the three-dimentional spatial distribu-tion of electron density is reduced from the chamber center to the wall. The distri-bution of electron density, electron temperature and power deposition is related to the shape and placement of the coil.More and more importance has been attached to inductively coupled plasma (ICP) in semiconductor manufacture. For a deep understanding of the plasma discharge process in the etching reactor, this study made a three-dimensional simulation on the Ar plasma discharge process with the commercial software CFD-ACE, which is according to the real experiment conditions and data supplied by North Microelectronic Corporation. The error of the simulation results is in the range of ±20% with credibility. The numerical results show that the three-dimentional spatial distribution of electron density is reduced from the chamber center to the wall. The distribution of electron density, electron temperature and power deposition is related to the shape and placement of the coil.

关 键 词：inductively coupled plasma ELECTRON density ELECTRON temperature power deposition 

分 类 号：TG664[金属学及工艺—金属切削加工及机床]