Carrier transport and luminescence properties of n-type GaN  

作　　者：ZHANG Zeng ZHANG Rong XIE ZiLi LIU Bin XIU XiangQian JIANG RuoLian HAN Ping GU ShuLin SHI Yi ZHENG YouDou 

机构地区：[1]Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2008年第8期1046-1052,共7页中国科学：物理学、力学、天文学（英文版）

基　　金：the National Basic Research Program of China (Grant No. 2006CB6049);the National Hi-Tech Research and Development Program of China (Grant No. 2006AA03A142);the National Natural Science Foundation of China (Grant Nos. 60721063, 60731160628 and 60676057);the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004) ;the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2005210)

摘　　要：The surface morphology,electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional SiH4 doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3×1016 cm-3 to 5.4×1018 cm-3. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH4 increases,which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different n concentrations varies from 12 to 22 meV,which may originate from the interactions of donor wave functions. The carrier transport mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap and B-M effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy concentration caused by Si doping.The surface morphology, electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional SiH4 doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3×1016 cm?3 to 5.4×1018 cm?3. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH4 increases, which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different n concentrations varies from 12 to 22 meV, which may originate from the interactions of donor wave functions. The carrier transport mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap and B-M effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy concentration caused by Si doping.

关 键 词：N-TYPE GAN MORPHOLOGY HALL-EFFECT LUMINESCENCE 

分 类 号：TN304[电子电信—物理电子学]