Study on pure silica core optical fibers  

作　　者：LI Jian ZHENG Kai CHANG DeYuan WEI Huai NING TiGang FU YongJun MAO XiangQiao YAN FengPing JIAN Wei JIAN ShuiSheng 

机构地区：[1]Key Laboratory of All Optical Network&Advanced Telecommunication Network of EMC,Institute of Lightwave Technology,Beijing Jiaotong University,Beijing 100044,China

出　　处：《Science China(Technological Sciences)》2008年第1期58-64,共7页中国科学（技术科学英文版）

基　　金：the Hi-Tech Research and Development Program of China (Grant No. 2002AA312190);National Natural Science Foundation of China (Grant No. 60477017);Program for the New Century Excellent Talents in University (Grant No. NCET-06-0076);Beijing Natural Science Foun-dation (Grant No. 4052023);the Beijing Jiaotong University Foundation (Grant No. 2006XM003)

摘　　要：An optimal refractive index profile of pure silica core optical fiber (PSCF) was de- signed, in combination with the characters of the modified chemical vapor deposi- tion (MCVD) process. Techniques of preform fabrication by a new furnace round heating MCVD process and fiber drawing process were reviewed. Difficulties in doping fluorine in silica, widening the depressed-index cladding and maintaining the index of fiber core were discussed. Methods used to overcome these difficulties were given at the same time. Additionally, the optimal refractive index profiles of PSCF were presented.An optimal refractive index profile of pure silica core optical fiber (PSCF) was designed, in combination with the characters of the modified chemical vapor deposition (MCVD) process. Techniques of preform fabrication by a new furnace round heating MCVD process and fiber drawing process were reviewed. Difficulties in doping fluorine in silica, widening the depressed-index cladding and maintaining the index of fiber core were discussed. Methods used to overcome these difficulties were given at the same time. Additionally, the optimal refractive index profiles of PSCF were presented.

关 键 词：PURE SILICA CORE optical fiber (PSCF) DEPRESSED index CLADDING modified chemical vapor deposition (MCVD) process 

分 类 号：TN25[电子电信—物理电子学]