激光诱发红外多光子解离和激光诱发介电击穿技术除去 SiCl_4中 PCl_3的研究  

Removal of PCI_3 Impurity from SiCl_4 by Laser-Induced Infrared Multiphoton Dissociation(LIMPD)and Laser-Induced Dielectric Breakdown(LIDB)Technique

作　　者：黄怡 张昌言[2] 

机构地区：[1]兰州化学物理研究所 [2]西北师范大学化学系

出　　处：《应用激光》1990年第6期259-263,共5页Applied Laser

摘　　要：采用TEA—CO_2激光器,研究了半导体原料 SiCl_4中杂质 PCl_3的激光解离。考察了不同激光诱发技术——红外多光子解离和激光诱发介电击穿,对激光提纯的有效性;研究了激光化学反应规律;探索了激光提纯与络合吸收法联合使用的可能性影响激光纯化的各种因素。Laser dissociation of PCI_3 impurity in SiCl_4,as the semiconductor raw material wasinvestigated using pulsed TEA-CO_2 laser.The influence of various induced processes upon laserpurification and behaviors of laser chemical reaction was discussed.The possibility of combinedmethod about laser purification-complex adsorption was explored,and the possible better wayof using laser photolysis to purify substancc also was discussed.The loss of bulk silicon tetrach-loride is less 16% during this process.Experimental results demonstrated that infrared multiphotondissociation of impurity was more feasible at lower pressure and lower concentration ofimpurity.Purification based on LIDB showed that when impurity were thermally unstablerelative to the bulk SiCl_4 and had the weaker bond in the system,they are bound to selectivelydissociate in case of irradiation intensity up to threshold.

关 键 词：激光诱发 多光子 解离 介电击穿 

分 类 号：O432.12[机械工程—光学工程]