掺氢GaAs薄膜的表面形貌及光学性质研究  

Study on the morphology and optical properties of hydrogen doped GaAs films

作　　者：朱慧群[1] 丁瑞钦[1] 吴桐庆[2] 蔡继业[3] 胡怡[3] 杨恢东[4] 丁才蓉[5] 汪河洲[5] 

机构地区：[1]五邑大学薄膜与纳米材料研究所,广东江门529020 [2]华南理工大学物理科学与技术学院,广东广州510641 [3]暨南大学化学系,广东广州510632 [4]暨南大学电子工程系,广东广州510632 [5]中山大学光电材料国家重点实验室,广东广州510275

出　　处：《云南大学学报（自然科学版）》2005年第S3期609-612,共4页Journal of Yunnan University(Natural Sciences Edition)

基　　金：广东省自然科学基金资助项目(04011770);江门市科技计划基金(江财企2003.61号)

摘　　要：采用射频磁控溅射和沉积气氛掺氢工艺制备了GaAs薄膜,研究掺氢对薄膜的表面形貌及光学性质的影响.X射线衍射结果显示,以衬底温度为500℃制备出的GaAs薄膜呈面心立方闪锌矿结构.原子力显微镜分析表明气氛掺氢会影响到GaAs薄膜的形貌和颗粒的大小.在500℃衬底温度下溅射气氛掺氢制备出的GaAs薄膜的吸收光谱出现了明显的激子峰,表明氢钝化对薄膜的光学性质的改善起重要的辅助作用.GaAs films have been deposited on substrates of quartz glass and silicon slices by radio frequency magnetron sputtering technique in the atmosphere with or without hydrogen.The effect of hydrogen on the morphology and optical properties of GaAs films was investigated.The X-ray diffraction shows that the GaAs film has a fcc zinc-blende structure when the substrate temperature is at 500?℃.AFM photos demonstrate that the hydrogen-gas-mixed atmosphere has a great influence on the morphology and the granular size of GaAs film.When the film was fabricated with hydrogen at 500?℃,a clear exciton hump was observed in the absorption spectrum.We conclude that the effect of hydrogen passivation could improve the optical properties of GaAs films significantly.

关 键 词：射频磁控溅射 GaAs薄膜 气氛掺氢 吸收光谱 氢钝化 

分 类 号：TB383.2[一般工业技术—材料科学与工程]