Adhesion of NiCu Films DC Biased Plasma-Sputter-Deposited on MgO (001)  

作　　者：Hong Qiu, Mituru Hashimoto ( Beijing Keda-Tianyu Microelectronic Material Technology Development Corporation, Beijing 100083, China Applied Science School, University of Science and Technology Beijing, Beijing 100083, China  Department of Applied Phys 

出　　处：《International Journal of Minerals,Metallurgy and Materials》2000年第3期218-221,共4页矿物冶金与材料学报（英文版）

摘　　要：NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of . The application of is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of . The application of is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.

关 键 词：NiCu film plasma-sputter-deposition negative bias voltage ADHESION 

分 类 号：O484[理学—固体物理]