Crystallization Growth of Single Crystal Cu by Continuous Casting  

作　　者：Zhenming XU and Jianguo LI (School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai 200030, China) Hengzhi FU (State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China) 

出　　处：《Journal of Materials Science & Technology》2000年第3期345-347,共3页材料科学技术（英文版）

摘　　要：Crystallization growth of single-crystal Cu by continuous casting has been investigated using self-designed horizontal continuous casting equipment and XRD. Experimental results showed that the crystallization plane of (311), (220) and (ill) were eliminated sequentially in evolutionary process. The final growth plane of crystal was (200), the direction of crystallization was [100], the growth direction of both sides of the rod inclined to axis, and the degree of deviation of direction [100] from the crystal axis was less than 10°. In order to produce high quality single crystal, the solid-liquid interface morphology must be smooth, even be planar.Crystallization growth of single-crystal Cu by continuous casting has been investigated using self-designed horizontal continuous casting equipment and XRD. Experimental results showed that the crystallization plane of (311), (220) and (ill) were eliminated sequentially in evolutionary process. The final growth plane of crystal was (200), the direction of crystallization was [100], the growth direction of both sides of the rod inclined to axis, and the degree of deviation of direction [100] from the crystal axis was less than 10°. In order to produce high quality single crystal, the solid-liquid interface morphology must be smooth, even be planar.

关 键 词：Crystallization Growth of Single Crystal Cu by Continuous Casting CU 

分 类 号：O78[理学—晶体学]