Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon Films Deposited by Electron Cyclotron Resonance Plasma  

作　　者：叶超 康健 宁兆元 程珊华 

出　　处：《Plasma Science and Technology》2000年第5期469-474,共6页等离子体科学和技术（英文版）

摘　　要：a-C:F films are deposited by microwave electron cyclotron resonance (ECR)plasma chemical vapor deposition (CVD) using trifluoromethane (CHF3) and benzene (C6H6) as source gases at different microwave powers. The radicals in plasma originating from source gases dissociation are analyzed by relative irradiance measurement. The bonding configurations and binding state of a-C:F films are measured with Fourier-transformed infrared spectrometer (FTIR) and x-ray photoelectron spectroscopy (XPS). The results show that a-C:F films are mainly composed of CF radical at lower powers but of CF2 radical at higher powers. The deposition of films is related to the radicals generated in plasma and the main bonding configurations are dependent on the ratio of CF to CF2 radicals in films.a-C:F films are deposited by microwave electron cyclotron resonance (ECR)plasma chemical vapor deposition (CVD) using trifluoromethane (CHF3) and benzene (C6H6) as source gases at different microwave powers. The radicals in plasma originating from source gases dissociation are analyzed by relative irradiance measurement. The bonding configurations and binding state of a-C:F films are measured with Fourier-transformed infrared spectrometer (FTIR) and x-ray photoelectron spectroscopy (XPS). The results show that a-C:F films are mainly composed of CF radical at lower powers but of CF2 radical at higher powers. The deposition of films is related to the radicals generated in plasma and the main bonding configurations are dependent on the ratio of CF to CF2 radicals in films.

关 键 词：CHF XPS cm Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon Films Deposited by Electron Cyclotron Resonance Plasma 

分 类 号：O644[理学—物理化学]