Plasma Deposition of Fluorinated Amorphous Carbon with CHF_3 and C_6H_6 Mixture  

作　　者：程珊华 康健 叶超 宁兆元 

出　　处：《Plasma Science and Technology》2000年第6期573-576,共4页等离子体科学和技术（英文版）

摘　　要：A-C:F, H film have been studied because of their low dielectric constant for application in interlayer dielectric in ULSC. These films were deposited by ECR plasma Reactor with CHF3 and C6H6 mixture as source gas. The effects of microwave power, pressure and CHF3/C6H6 ratios on the film deposition rates have been investigated. The fluorocarbon and hydrocarbon radical species in the plasma discharges were analyzed by using the optical emission spectra. It demonstrates that CF2, CF and CH radicals play the important roles in the films being formed.A-C:F, H film have been studied because of their low dielectric constant for application in interlayer dielectric in ULSC. These films were deposited by ECR plasma Reactor with CHF3 and C6H6 mixture as source gas. The effects of microwave power, pressure and CHF3/C6H6 ratios on the film deposition rates have been investigated. The fluorocarbon and hydrocarbon radical species in the plasma discharges were analyzed by using the optical emission spectra. It demonstrates that CF2, CF and CH radicals play the important roles in the films being formed.

关 键 词：CHF Plasma Deposition of Fluorinated Amorphous Carbon with CHF3 and C6H6 Mixture CF CAF 

分 类 号：O539[理学—等离子体物理]