Kinetic Study on Uniformity of AlGaAs Grown by MOVPE  

作　　者：公延宁 莫金玑 余海生 汪乐 夏冠群 

出　　处：《Rare Metals》1999年第4期264-269,共6页稀有金属（英文版）

摘　　要：The growth kinetic factors affecting the uniformity of AlGaAs in a horizontal atmospheric MOVPE (AP-MOVPE) reactor with a horizontal susceptor were investigated. The decrease in the growth rate of AlGaAs (R-AlGaAs) in the now direction is related to both the gas depletion and the decreasing growth rate of GaAs (R-GaAs) with the increasing gas temperature in this direction. The change of x in the flow direction has relations not only to the different changes of R-GaAs and R-AlAs(the growth rate of AlAs) with the gas temperature, according to which x will increase in the now direction, but also to the higher depletion rate of Al containing species compared with that of Ga containing species, according to which x: will decrease. Due to the similar reason, the loss of symmetry about the length axis of the susceptor can also result in the monotone increase or decrease in thickness and x in the crosswise direction.The growth kinetic factors affecting the uniformity of AlGaAs in a horizontal atmospheric MOVPE (AP-MOVPE) reactor with a horizontal susceptor were investigated. The decrease in the growth rate of AlGaAs (R-AlGaAs) in the now direction is related to both the gas depletion and the decreasing growth rate of GaAs (R-GaAs) with the increasing gas temperature in this direction. The change of x in the flow direction has relations not only to the different changes of R-GaAs and R-AlAs(the growth rate of AlAs) with the gas temperature, according to which x will increase in the now direction, but also to the higher depletion rate of Al containing species compared with that of Ga containing species, according to which x: will decrease. Due to the similar reason, the loss of symmetry about the length axis of the susceptor can also result in the monotone increase or decrease in thickness and x in the crosswise direction.

关 键 词：KINETICS ALGAAS UNIFORMITY atmospheric metal-organic vapor phase epitaxy 

分 类 号：TN304.2[电子电信—物理电子学]