掺La(OH)_3多孔硅的感湿特性研究  

STUDY ON POROUS SILICON DOPED LA(OH)_3

作　　者：涂楚辙[1] 司地克.买合苏提 李新凯[1] 王齐春[1] 马新来[1] 吾买尔.阿不力孜 

机构地区：[1]新疆大学,乌鲁木齐830046 [2]新疆师范大学,乌鲁木齐830054

出　　处：《新疆师范大学学报（自然科学版）》1999年第1期10-12,共3页Journal of Xinjiang Normal University(Natural Sciences Edition)

摘　　要：本文报道了多孔硅的制备方法及形成条件,并对掺La(OH)_3多孔硅的感湿特性进行了实验研究,结果表明掺La(OH)_3多孔硅的交流阻抗随环境温度的增大而减少,呈近似线性规律,敏感度变化很小。掺La(OH)_3多孔硅化传统的LiCl敏感材料的繁感度有所提高。In this paper,a method for preparation and forming condition of porous silicon are reported. The humidity - sensitive properities of porous silicon doped La(OH)3 were studied in experiment. The results show that altemating impedance of porous silicon-doped La(OH)3 decreases in approximate linearity relation with environment humidity rising. The compared humid sensitivity of porous silicon doped La(OH)3 was improved with traditional LiCl materials.

关 键 词：多孔硅 感湿特性 交流阻抗 

分 类 号：TB381[一般工业技术—材料科学与工程]