I-V and C-V properties of TiO_2 thin film by pulsed-laser reactive deposition  

作　　者：FU Zhengwen 1, ZHOU Mingfei 1, ZHANG Shengkun 2,CHEN Lianyao 2 and QIN Qizong 1 1. Laser Chemistry Institute, Fudan University, Shanghai 200433, China 2. Department of Physics, Fudan University, Shanghai 200433, China 

出　　处：《Chinese Science Bulletin》1998年第16期1344-1349,共6页

基　　金：ThisworkwassupportedbytheNationalNaturalScienceFoundationofChina (GrantNo .2 96 830 0 1)

摘　　要：TiO-2 thin films have bee deposited on p-Si(111) substrates by pulsed-laser ablation of metallic Ti target in the O-3 ambient. The current-voltage and capacitance-voltage of the Al/TiO-2/Si capacitors are measured. The results show that the dielectric constant of thin film after being annealed at 700℃ is found to be 46, and the border trap density and the interface state density at the TiO-2/p-Si interface are 1.8×10 12 cm -2 and 2×10 12 eV -1·cm -2, respectively. The conduction mechanisms of as-deposited films are also discussed.TiO-2 thin films have bee deposited on p-Si(111) substrates by pulsed-laser ablation of metallic Ti target in the O-3 ambient. The current-voltage and capacitance-voltage of the Al/TiO-2/Si capacitors are measured. The results show that the dielectric constant of thin film after being annealed at 700℃ is found to be 46, and the border trap density and the interface state density at the TiO-2/p-Si interface are 1.8×10 12 cm -2 and 2×10 12 eV -1·cm -2, respectively. The conduction mechanisms of as-deposited films are also discussed.

关 键 词：TiO-2 dielectric PROPERTIES electrical PROPERTIES PULSED-LASER deposition. 

分 类 号：O484.1[理学—固体物理]