Interface Formation of Several Heterojunctions Concerning Ⅳ and Ⅱ-Ⅵ Semiconductors  

作　　者：班大雁 薛剑耿 方容川 徐世宏 陆尔东 徐彭寿 

出　　处：《Rare Metals》1997年第3期1-7,共7页稀有金属（英文版）

摘　　要：The interface formations of the heterojunctions concerning Ⅳ and Ⅱ Ⅵ semiconductors were studied via synchrotron radiation photoemission spectroscopy. Experimental results show that the overlayer growths of Si or Ge on Ge, ZnSe and ZnS substrates are in compliance with an ideal two dimensional (2D) growth mode. However, deviations from 2D mode were also observed during the interfaces formation of Ge/CdTe and Si/CdTe, and are ascribed to large lattice mismatching and interfacial reaction.The interface formations of the heterojunctions concerning Ⅳ and Ⅱ Ⅵ semiconductors were studied via synchrotron radiation photoemission spectroscopy. Experimental results show that the overlayer growths of Si or Ge on Ge, ZnSe and ZnS substrates are in compliance with an ideal two dimensional (2D) growth mode. However, deviations from 2D mode were also observed during the interfaces formation of Ge/CdTe and Si/CdTe, and are ascribed to large lattice mismatching and interfacial reaction.

关 键 词：Interface formation Ⅳ and Ⅱ  Ⅵ heterojunctions Synchrotron radiation photoemission 

分 类 号：TN304.2[电子电信—物理电子学]