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作 者:Yuan LIN Rui Feng LIN Xiao Wen Zhou Jing Bo Zhang Xu Rui Xiao(Institute of Photographic Chemistry, The Chinese Academy of Sciences, Bejing,100101)
出 处:《Chinese Chemical Letters》1997年第9期831-832,共2页中国化学快报(英文版)
摘 要:Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample separation. Tunnelling current(i) - voltage(v) curve and differential conductance spectrum show an n-type schottky rectifying behaviour and yield a direct measure of band gap energy. An increase of bandgap energy (1.8 - 2.1eV) was measured indicating energy quantization of this particular thin film.,Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample separation. Tunnelling current(i) - voltage(v) curve and differential conductance spectrum show an n-type schottky rectifying behaviour and yield a direct measure of band gap energy. An increase of bandgap energy (1.8 - 2.1eV) was measured indicating energy quantization of this particular thin film.,
关 键 词:Thin CDSE Scanning Tunneling Microscopic and Scanning Tunneling Spectroscopic Studies of Nanocrystalline CdSe Thin Film
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