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出 处:《Journal of Electronics(China)》1997年第1期68-74,共7页电子科学学刊(英文版)
摘 要:A novel three layers microstrip antenna element that has the advantages of wideband and high-gain is proposed. The eigenvalue equation and the frequency characteristic formulas of the input Voltage Stand Wave Ratio ( VSWR ) are obtained by using the spectral domain method and equivalent circuit method, respectively. With the aid of the numerical results, a C-band microstrip antenna element with bandwidth of 16% (VSWR【1.5) or 25% (VSWR【2) and gain of 10.2-11.3 dB is developed, which are much larger than the bandwidth of 5-6% and the gain of 6-7 dB of the common microstrip antenna element.A novel three layers microstrip antenna element that has the advantages of wideband and high-gain is proposed. The eigenvalue equation and the frequency characteristic formulas of the input Voltage Stand Wave Ratio ( VSWR ) are obtained by using the spectral domain method and equivalent circuit method, respectively. With the aid of the numerical results, a C-band microstrip antenna element with bandwidth of 16% (VSWR<1.5) or 25% (VSWR<2) and gain of 10.2-11.3 dB is developed, which are much larger than the bandwidth of 5-6% and the gain of 6-7 dB of the common microstrip antenna element.
关 键 词:MICROSTRIP antenna WIDE BAND High GAIN
分 类 号:TN821[电子电信—信息与通信工程]
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